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McStas: Sapphire_Filter Component

[ Identification | Description | Input parameters | Output parameters | Links ]

The Sapphire_Filter Component

Sapphire filter at 300K


  • Author: Jonas Okkels Birk (based upon Filteg_Graphite by Thomas C Hansen (2000))
  • Origin: PSI
  • Date: 6 December 2006
  • Version:(Unknown)


This sapphire filter, defined by two identical rectangular opening apertures,
is based upon an absorption function absorp=exp(L*A+C*(exp(-(B/L^2+D/L^4))))
decribed by Freund (1983) Nucl. Instrum. Methods, A278, 379-401. The
defaultvalues is for Sapphire at 300K as found by measurement by (Mildner &
Lamaze (1998) J. Appl. Cryst. 31,835-840
( It
is possble to ajust the formular to other materials or temperatures by typing in
other parameters.
The transmission in sapphire is only lightly demependt on temperature, but
The formular is only cheked at wavelenths between 0.5 and 14 AA (0.4 meV 0.3
The filter is for example used in the Eiger beamline at PSI to cut of high

WARNING: This is a contributed Component.

Input parameters

Parameters in boldface are required; the others are optional.
Name Unit Description Default
xmin m Lower x bound -0.16
xmax m Upper x bound 0.16
ymin m Lower y bound -0.16
ymax m Upper y bound 0.16
len m Thickness of filter 0.1
A 0.8116
B 0.1618
C 21.24
D 0.1291


[ Identification | Description | Input parameters | Output parameters | Links ]

Generated automatically by McDoc, Peter Willendrup <> / Wed Jan 12 15:13:20 2022

Last Modified: Wednesday, 12-Jan-2022 16:13:20 CET
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